2S322

Transistor NOS de type PNP SILICIUM à pattes longues en boitier TO1 

 
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.4 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 15