2SK2655

The 2SK2655 is a high power N-channel FET transistor that is designed for use in audio power amplifiers, switching power supplies, and other high voltage applications. It is characterized by its high gain, low noise, and high efficiency, making it an ideal choice for audiophiles who demand the very best in sound quality.

With a maximum drain-source voltage of 600V and a maximum drain current of 8A, the 2SK2655 is capable of delivering exceptional performance in a wide range of applications. Its high input impedance and low output impedance make it an excellent choice for use in audio amplifiers, where it can deliver high fidelity sound with minimal distortion.

In addition to its impressive electrical performance, the 2SK2655 is also highly reliable and durable. It features a rugged construction that can withstand high temperatures and harsh operating conditions, ensuring long-term stability and reliability.

For those who require technical specifications, the 2SK2655 has a typical input capacitance of 1600pF, a typical gate threshold voltage of 4V, and a maximum drain-source on-resistance of 0.45 ohms. These specifications make it an ideal choice for applications where high efficiency and low distortion are critical.

Overall, the 2SK2655 is a high-quality FET transistor that offers exceptional performance and reliability in a wide range of applications. Whether you are building an audio amplifier or a switching power supply, this versatile component is sure to deliver top-notch results every time. So if you are looking for the very best in FET transistors, look no further than the 2SK2655!